000			01506nam a2200241Ia 4500
003			ISI Library, Kolkata
005			20250220120342.0
008			250220b |||||||| |||| 00| 0 eng d
020			_a9788126517909
040			_aISI Library _bEnglish
041			_aEnglish
082	0	4	_a621.38173 _bG411
100	1	0	_aGhandhi, Sorab K.
245	1	0	_aVLSI fabrication principles: _bSilicon and Gallium Arsenide/ _cSorab K. Ghandhi
250			_a2nd ed.
260			_aNew Delhi: _bJohn Wiley & Sons, _c1994
300			_axxiv, 834 pages: _bdiagrams; _c23 cm.
504			_aIncludes bibliography and index
505	0		_aMaterial Properties -- Phase Diagrams and Solid Solubility -- Crystal Growth and Doping -- Diffusion -- Epitaxy -- Ion Implantation -- Native Films -- Deposited Films -- Etching and Cleaning -- Lithographic Processes -- Device and Circuit Fabrication -- The Mathematics of Diffusion
520			_aFully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
650	0		_2Semiconductors
942			_cBK _2ddc
999			_c436760 _d436760