VLSI fabrication principles: Silicon and Gallium Arsenide/
xxiv, 834 pages: diagrams; 23 cm. Content notes : Material Properties -- Phase Diagrams and Solid Solubility -- Crystal Growth and Doping -- Diffusion -- Epitaxy -- Ion Implantation -- Native Films -- Deposited Films -- Etching and Cleaning -- Lithographic Processes -- Device and Circuit Fabrication -- The Mathematics of Diffusion
